DESCRIPTION

Responsible for analysis, design, modeling, layout and verification of RF and millimeter-wave CMOS circuits for very high data rate integrated wireless transceivers.  Duties include developing circuit topologies and performing circuit simulation of RF and millimeter-wave CMOS integrated circuits including low-noise amplifiers, power amplifiers, frequency mixers, VCOs, frequency multipliers, and power detectors; translating specifications to circuit requirements; making intelligent trade-offs amongst power consumption, chip area, and performance; performing 3-D full-wave electromagnetic design and simulation of on-chip passive components such as inductors, transmission lines, baluns, transformers, power dividers/combiners; performing layout, DRC, LVS, and parasitic extraction for circuit blocks within the Cadence IC design suite; testing and characterizing circuit blocks using microwave test equipment such as vector network analyzers, spectrum analyzers, noise figure meters, power meters, etc.; participating in system integration and testing; working with the operations team to improve the parametric yield of the designs.

REQUIREMENTS
Requires Masters degree in Electrical/Electronics Engineering plus 1 year of experience in job offered/IC circuit design.
Masters degree focus must be in transistor-level RF and millimeter-wave integrated circuit design.  Required year of experience must be in transistor-level RF and millimeter-wave CMOS integrated circuit design, and also include:

• circuit simulation tools such as SpectreRF, ADS
• layout, DRC, LVS, and parasitic extraction within the Cadence IC design suite.
• experience with 2.5-D planar or 3-D full-wave EM simulation tools.
• microwave measurement techniques and equipment.
  
  

Please send resume to: hr@sibeam.com or mail to: HR, SiBEAM, Inc., 555 North Mathilda Ave., Suite 100, Sunnyvale, CA 94085.   Must refer to job number:  MG1007